document number: 94016 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 11-sep-08 1 hyperfast rectifier, 2 x 15 a fred pt tm 30CTH03PBF vishay high power products features ? hyperfast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? lead (pb)-free (?pbf? suffix) ? designed and qualified for aec q101 level description/applications 300 v series are the state of the art hyperfast recovery rectifiers designed with optim ized performance of forward voltage drop and hyperfast recovery time. the planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for us e in the output rectification stage of smps, ups, dc-to-dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. product summary t rr (maximum) 36 ns i f(av) 2 x 15 a v r 300 v to-220ab anode 1 3 2 base common cathode 2 common cathode anode a v aila b le p b -free rohs* compliant absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 300 v average rectified forward current per diode i f(av) t c = 153 c 15 a per device 30 non-repetitive peak surge current i fsm t c = 25 c 150 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 300 - - v forward voltage v f i f = 15 a - 1.0 1.25 i f = 15 a, t j = 125 c - 0.85 0.95 reverse leakage current i r v r = v r rated - - 40 a t j = 125 c, v r = v r rated - 8 200 junction capacitance c t v r = 300 v - 38 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94016 2 revision: 11-sep-08 30CTH03PBF vishay high power products hyperfast rectifier, 2 x 15 a fred pt tm dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - - 36 ns i f = 1 a, di f /dt = 100 a/s, v r = 30 v - - 30 t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 200 v -33- t j = 125 c - 48 - peak recovery current i rrm t j = 25 c - 2.8 - a t j = 125 c - 6.5 - reverse recovery charge q rr t j = 25 c - 46 - nc t j = 125 c - 160 - thermal - mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per diode r thjc --1.4c/w marking device case style to-220ab 30cth03
document number: 94016 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 11-sep-08 3 30CTH03PBF hyperfast rectifier, 2 x 15 a fred pt tm vishay high power products fig. 1 - typical forward voltage dr op characteristics fig. 2 - typica l values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics t j = 175 c t j = 125 c t j = 25 c 100 10 1 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.01 0.1 1 10 100 0 100 300 250 200 v r - reverse voltage (v) i r - reverse current (ma) 150 50 0.001 t j = 150 c t j = 100 c t j = 175 c t j = 125 c t j = 25 c t j = 50 c t j = 75 c 100 1000 0 100 200 250 300 10 v r - reverse voltage (v) c t - junction capacitance (pf) 150 50 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single p u lse (thermal resistance) . . p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94016 4 revision: 11-sep-08 30CTH03PBF vishay high power products hyperfast rectifier, 2 x 15 a fred pt tm fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 150 160 170 1 8 0 see note (1) s qu are w a v e (d = 0.50) rated v r applied 140 dc 0 5 10 15 20 25 average power loss (w) i f(av) - average forward current (a) 0 4 12 16 20 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 8 rms limit 10 100 1000 t rr (ns) di f /dt (a/s) 100 v r = 200 v i f = 15 a t j = 125 c t j = 25 c 1000 10 100 1000 q rr (nc) di f /dt (a/s) 100 v r = 200 v i f = 15 a t j = 125 c t j = 25 c
document number: 94016 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 11-sep-08 5 30CTH03PBF hyperfast rectifier, 2 x 15 a fred pt tm vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adj u st q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of c u rrent thro u gh zero crossing (2) i rrm - peak re v erse reco v ery c u rrent (3) t rr - re v erse reco v ery time meas u red from zero crossing point of negati v e going i f to point w here a line passing thro u gh 0.75 i rrm and 0.50 i rrm extrapolated to zero c u rrent. (4) q rr - area u nder c u r v e defined b y t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of c u rrent d u ring t b portion of t rr
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94016 6 revision: 11-sep-08 30CTH03PBF vishay high power products hyperfast rectifier, 2 x 15 a fred pt tm ordering information table 1 - current rating (30 = 30 a) 2 - c = common cathode 3 - package: 4 t = to-220 4 - h = hyperfast recovery 5 - voltage rating (03 = 300 v) 6 - none = standard production pbf = lead (pb)-free tube standard pack quantity: 50 pieces device code 5 13 24 6 30 c t h 03 pbf links to related documents dimensions http://www.vishay.com/doc?95222 part marking information http://www.vishay.com/doc?95225
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